Samsung tipped to start the mass production of 3nm chips the following week. Samsung will reportedly announce the beginning of mass production of 3nm chips next week. This means that Samsung will jump ahead of TSMC, which will begin production of 3nm chips in the second half of this year.
Samsung’s new 3nm process will bring a 35% decrease in area, 30% higher performance, or 50% lower power consumption compared to the 5nm process used for the Snapdragon 888 and Exynos 2100. This means the 3nm process will use a Gate-All-Around (GAA) design for transistors, allowing smaller transistors with the same current handling capabilities.
Samsung tipped to start the mass production of 3nm chips the following week
The MOSFET design used in the 3nm node is shown here. US President Joe Biden visited Samsung’s plant last month, where the company demonstrated its new 3nm tech. In 2018, there were rumors that Samsung could invest $10 billion to build a 3nm foundry in Texas.
That investment has grown to $17 billion, and the plant is expected to begin operation in 2024. The real issue with this technology is yield. In October of last year, Samsung revealed that the yield of its 3nm process was similar to the 4nm process.
Although the company never officially stated this number, analysts believe that Samsung’s 4nm process was plagued with yield issues. A second-generation 3nm node is anticipated in 2023, and the company’s roadmap also includes an MBCFET-based 2nm node in 2025.